please design the appropriate reliability upon reviewing the ty semiconductor reliability handbook SSM3K15F high speed switching applications analog switch applications ? small package ? low on resistance : r on = 4.0 ? (max) (@v gs = 4 v) : r on = 7.0 ? (max) (@v gs = 2.5 v) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gss 20 v dc i d 100 drain current pulse i dp 200 ma drain power dissipation (ta = 25 c) p d 200 mw channel temperature t ch 150 c storage temperature t stg ? 55~150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). marking equivalent circuit handling precaution when handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrosta tic electricity. operators sh ould wear anti-static clothing, and containers and other objects that come into direct contact with de vices should be made of anti-static materials. unit: mm 1.1-0.1 2.90.2 1.9 +0.1 0.4-0.05 1 23 0.95 0.95 +0.2 0.16-0.06 +0.1 0.3 0~0.1 1.5-0.15 +0.25 2.5-0.3 +0.5 1.gate 2.source 3.drain weight: 0.012 g (typ.) d p 1 2 3 12 3 product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 16 v, v ds = 0 ? ? 1 a drain-source breakdown voltage v (br) dss i d = 0.1 ma, v gs = 0 30 ? ? v drain cut-off current i dss v ds = 30 v, v gs = 0 ? ? 1 a gate threshold voltage v th v ds = 3 v, i d = 0.1 ma 0.8 ? 1.5 v forward transfer admittance ? y fs ? v ds = 3 v, i d = 10 ma 25 ? ? ms i d = 10 ma, v gs = 4 v ? 2.2 4.0 drain-source on resistance r ds (on) i d = 10 ma, v gs = 2.5 v ? 4.0 7.0 input capacitance c iss v ds = 3 v, v gs = 0, f = 1 mhz ? 7.8 ? pf reverse transfer capacitance c rss v ds = 3 v, v gs = 0, f = 1 mhz ? 3.6 ? pf output capacitance c oss v ds = 3 v, v gs = 0, f = 1 mhz ? 8.8 ? pf turn-on time t on ? 50 ? switching time turn-off time t off v dd = 5 v, i d = 10 ma, v gs = 0~5 v ? 180 ? ns switching time test circuit (a) test circuit (b) v in precaution v th can be expressed as voltage between gate and source when low operat ing current value is i d = 100 a for this product. for normal switching operation, v gs (on) requires higher voltage than v th and v gs (off) requires lower voltage than v th . (relationship can be established as follows: v gs (off) < v th < v gs (on) ) please take this into consid eration for using the device. (c) v out t on 90% 10% 0 v 5 v 10% 90% t off t r t f v dd v ds ( on ) v dd = 5 v d.u. < = 1% input: t r , t f < 5 ns (z out = 50 ) common source ta = 25c v dd output input 5 v 0 10 s 50 r l SSM3K15F product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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